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Ionizing Radiation Effects in MOS Devices and Circuits |
| Editor: T. P. Ma (Yale Univ.); Editor: Paul V. Dressendorfer (Sandia National Laboratories, Albuquerque, New Mexico) |
| The first comprehensive overview describing the effects of ionizing radiation on MOS devices, as well as how to design, fabricate, and test integrated circuits intended for use in a radiation environment. Also addresses process-induced radiation effects in the fabrication of high-density circuits. Reviews the history of radiation-hard technology, providing background information for those new to the field. Includes a comprehensive review of the literature and an annotated listing of research activities in radiation-hardness research.
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| Cloth Bound |
Pages, 6-3/8 x 9-1/4 in.
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Item #:
Price: |
047184893X
$250.00 |
John Wiley & Sons, Inc. | |
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